inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK2224-01 description drain current i d =3a@ t c =25 drain source voltage- : v dss = 900v(min) fast switching speed applications switching regulators ups dc-dc converters general purpose power amplifier absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 900 v v gs gate-source voltage 30 v i d drain current-continuous@ tc=25 3 a i d(puls) pulse drain current 12 a p tot total dissipation@t c =25 50 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 2.5 /w r th j-a thermal resistance, junction to ambient 30 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK2224-01 electrical characteristics (t c =25 ) symbol parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 1ma 900 v v gs (th ) gate threshold voltage v ds = v gs ; i d =1ma 2.5 3.0 3.5 v v sd diode forward on-voltage i f =2 i dr ;v gs = 0 0.98 1.47 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 1.5a 2.5 4.0 i gss gate-body leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 900v; v gs = 0 500 a ciss input capacitance v ds =25v; v gs =0v; f t =1mhz 1000 1500 pf crss reverse transfer capacitance 25 40 coss output capacitance 90 135 t r rise time v gs =10v; i d =3a; v dd =600v; r gs =10 10 15 ns t d(on) turn-on delay time 20 30 t f fall time 15 25 t d(off) turn-off delay time 60 90 pdf pdffactory pro www.fineprint.cn
|
